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I D25
HiPerFET TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t rr
IXFK 21N100Q
IXFX 21N100Q
V DSS = 1000 V
= 21 A
R DS(on) = 0.50 ?
t rr ≤ 250 ns
PLUS 247 TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
G
D
(TAB)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
1000
1000
± 20
± 30
V
V
V
V
TO-264 AA (IXFK)
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
21
84
21
A
A
A
G = Gate
G
D
S
D = Drain
(TAB)
E AR
E AS
T C = 25 ° C
T C = 25 ° C
60
2.5
mJ
J
S = Source
TAB = Drain
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10 s
10
500
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
Features
? IXYS advanced low Q g process
? Low gate charge and capacitances
- easier to drive
- faster switching
? International standard packages
? Low R DS (on)
? Rated for unclamped Inductive load
switching (UIS) rated
M d
Weight
Mounting torque
TO-264
PLUS 247
0.4/6
6
Nm/lb.in.
g
? Molding epoxies meet UL 94 V-0
flammability classification
TO-264
10
g
Applications
? DC-DC converters
? Battery chargers
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? Switched-mode and resonant-mode power
supplies
? DC choppers
? AC motor control
V DSS
V GS = 0 V, I D = 1mA
1000
V
? Temperature and lighting controls
V GS(th)
I GSS
V DS = V GS , I D = 4mA
V GS = ± 20 V, V DS = 0
3
5.5
± 100
V
nA
Advantages
? PLUS 247 TM package for clip or spring
mounting
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 ? I D25
100
2
0.50
μ A
mA
?
? Space savings
? High power density
Note 1
? 2002 IXYS All rights reserved
DS98677D(10/03)
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